Infineon · FETs & Power MOSFETs · MPN IPW50R250CP
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.42nF |
550V 13A 3V 114W 250mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS