Infineon · FETs & Power MOSFETs · MPN IPW50R199CP
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 45nC@10V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 199mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
500V 17A 3.5V 139W 199mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS