Infineon · FETs & Power MOSFETs · MPN IPW50R190CE
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 47.2nC@10V |
| Output Capacitance(Coss) | 68pF |
| Current - Continuous Drain(Id) | 24.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 152W |
| Reverse Transfer Capacitance (Crss@Vds) | 251pF |
| RDS(on) | 190mΩ@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.137nF |
500V 24.8A 3.5V 152W 190mΩ@13V 1 N-channel TO-247-3-41 Single FETs, MOSFETs RoHS