Infineon · FETs & Power MOSFETs · MPN IPU80R1K0CE
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 83W |
| RDS(on) | 950mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 785pF |
800V 3V 83W 950mΩ@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS