Infineon · FETs & Power MOSFETs · MPN IPTG111N20NM3FDATMA1
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 520pF |
| Current - Continuous Drain(Id) | 108A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 11.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
| Type | N-Channel |
N-Channel 200V 108A 375W HSOG-8