Infineon IPTG063N15NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPTG063N15NM5ATMA1

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)16.2A;122A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation3.8W;214W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)6.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.8nF

Technical details

N-Channel 150V 16.2A 122A 3.8W 214W HSOG-8

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