Infineon IPTG044N15NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPTG044N15NM5ATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)89nC@10V
Current - Continuous Drain(Id)19.4A;174A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation3.8W;300W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7nF

Technical details

150V 4.6V 4.4mΩ@10V 1 N-channel HSOG-8 Single FETs, MOSFETs RoHS

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