Infineon IPTG039N15NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPTG039N15NM5ATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)93nC@10V
Current - Continuous Drain(Id)190A
Output Capacitance(Coss)1.93nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation319W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.3nF
TypeN-Channel

Technical details

N-Channel 150V 190A 319W HSOG-8

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