Infineon IPTG025N08NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPTG025N08NM5ATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)70nC@10V
Current - Continuous Drain(Id)184A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF

Technical details

80V 184A 3.8V 3.8W 2.5mΩ@10V 1 N-channel HSOG-8 Single FETs, MOSFETs RoHS

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