Infineon · FETs & Power MOSFETs · MPN IPTG018N10NM5ATMA1
No reviews yet — be the first to review Infineon IPTG018N10NM5ATMA1.
| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 273A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
100V 273A 3V 3.8W 1.8mΩ@10V 1 N-channel HSOG-8 Single FETs, MOSFETs RoHS