Infineon · FETs & Power MOSFETs · MPN IPTG017N12NM6ATMA1
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| Gate Charge(Qg) | 113nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 2.4nF |
| Current - Continuous Drain(Id) | 331A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 395W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.1nF |
| Type | N-Channel |
120V 331A 3.1V 395W 1 N-channel N-Channel PG-HSOG-8-1 Single FETs, MOSFETs RoHS