Infineon IPTG007N06NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPTG007N06NM5ATMA1

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Specifications

Gate Charge(Qg)261nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)454A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)0.75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)21nF
TypeN-Channel

Technical details

N-Channel 60V 454A 375W HSOG-8

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