Infineon · FETs & Power MOSFETs · MPN IPTG007N06NM5ATMA1
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| Gate Charge(Qg) | 261nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 454A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 0.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 21nF |
| Type | N-Channel |
N-Channel 60V 454A 375W HSOG-8