Infineon · FETs & Power MOSFETs · MPN IPTC019N10NM5ATMA1
No reviews yet — be the first to review Infineon IPTC019N10NM5ATMA1.
| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.8nF |
| Current - Continuous Drain(Id) | 279A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
N-Channel 100V 279A 300W Surface Mount HDSOP-16