Infineon · FETs & Power MOSFETs · MPN IPTC012N06NM5ATMA1
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| Gate Charge(Qg) | 106nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.8nF |
| Current - Continuous Drain(Id) | 311A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 214W |
| RDS(on) | 1.2mΩ@10V |
| Input Capacitance(Ciss) | 7.8nF |
| Type | N-Channel |
60V 311A 2.8V 214W 1.2mΩ@10V N-Channel TOLT Single FETs, MOSFETs RoHS