Infineon · FETs & Power MOSFETs · MPN IPT65R155CFD7XTMA1
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 122W |
| RDS(on) | 155mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 549pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.291nF |
650V 12A 3.5V 122W 155mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS