Infineon · FETs & Power MOSFETs · MPN IPT65R105G7
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| Gate Charge(Qg) | 35nC@400V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 579pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.67nF |
650V 32A 3.5V 156W 105mΩ@10V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS