Infineon · FETs & Power MOSFETs · MPN IPT65R080CFD7XTMA1
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 34A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 201W |
| RDS(on) | 67mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.513nF |
650V HSOF-8