Infineon · FETs & Power MOSFETs · MPN IPT65R033G7XTMA1
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 69A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 391W |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5nF |
N-Channel 650V 69A 391W HSOF-8