Infineon · FETs & Power MOSFETs · MPN IPT60R150G7XTMA1
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 19pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 106W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 902pF |
N-Channel 600V 17A 106W HSOF-8