Infineon · FETs & Power MOSFETs · MPN IPT60R125G7
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.08nF |
N-Channel 650V 27A 120W HSOF-8