Infineon · FETs & Power MOSFETs · MPN IPT60R125CFD7XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 31nC@10V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 127W |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
600V 21A 4.5V 127W 125mΩ@10V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS