Infineon · FETs & Power MOSFETs · MPN IPT60R065S7
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| Gate Charge(Qg) | 51nC@12V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 904pF |
| RDS(on) | 65mΩ@12V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.932nF |
600V 8A 4V 167W 65mΩ@12V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS