Infineon · FETs & Power MOSFETs · MPN IPT60R055CFD7XTMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 67nC@10V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 236W |
| RDS(on) | 55mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 987pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.724nF |
650V 27A 4V 236W 55mΩ@10V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS