Infineon IPT60R050G7XTMA1

Infineon · FETs & Power MOSFETs · MPN IPT60R050G7XTMA1

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)68nC@10V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation245W
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.67nF

Technical details

N-Channel 600V 44A 245W HSOF-8

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