Infineon IPT60R022S7

Infineon · FETs & Power MOSFETs · MPN IPT60R022S7

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Specifications

Gate Charge(Qg)150nC@12V
Drain to Source Voltage600V
Output Capacitance(Coss)89pF
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation390W
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.639nF

Technical details

N-Channel 600V 23A 390W HSOF-8

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