Infineon · FETs & Power MOSFETs · MPN IPT60R022S7
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| Gate Charge(Qg) | 150nC@12V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 89pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 390W |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.639nF |
N-Channel 600V 23A 390W HSOF-8