Infineon IPT60R016CM8XTMA1

Infineon · FETs & Power MOSFETs · MPN IPT60R016CM8XTMA1

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Specifications

Gate Charge(Qg)171nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)142A
Output Capacitance(Coss)91pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation694W
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.545nF
TypeN-Channel

Technical details

600V 142A 4.2V 694W 13mΩ@10V 1 N-channel N-Channel PG-HSOF-8 Single FETs, MOSFETs RoHS

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