Infineon · FETs & Power MOSFETs · MPN IPT210N25NFD
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| Gate Charge(Qg) | 86nC@125V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 69A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.4pF |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
250V 69A 4V 375W 21mΩ@10V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS