Infineon IPT210N25NFD

Infineon · FETs & Power MOSFETs · MPN IPT210N25NFD

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Specifications

Gate Charge(Qg)86nC@125V
Drain to Source Voltage250V
Current - Continuous Drain(Id)69A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)9.4pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7nF

Technical details

250V 69A 4V 375W 21mΩ@10V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS

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