Infineon · FETs & Power MOSFETs · MPN IPT111N20NFDATMA1
No reviews yet — be the first to review Infineon IPT111N20NFDATMA1.
| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 87nC@10V |
| Output Capacitance(Coss) | 530pF |
| Current - Continuous Drain(Id) | 96A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.4pF |
| RDS(on) | 11.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
| Type | N-Channel |
N-Channel 200V 96A 375W HSOF-8