Infineon IPT059N15N3ATMA1

Infineon · FETs & Power MOSFETs · MPN IPT059N15N3ATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)92nC@10V
Output Capacitance(Coss)838pF
Current - Continuous Drain(Id)155A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.182nF
TypeN-Channel

Technical details

N-Channel 150V 155A 375W HSOF-8

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