Infineon · FETs & Power MOSFETs · MPN IPT047N15NM6ATMA1
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| Output Capacitance(Coss) | 1.1nF |
|---|---|
| Pd - Power Dissipation | 234W |
| Configuration | - |
| Drain to Source Voltage | 150V |
| Gate Charge(Qg) | 51nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 3.8mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.6nF |
234W 150V 3.5V 3.8mΩ@15V 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS