Infineon IPT044N15N5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPT044N15N5ATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)84nC@10V
Output Capacitance(Coss)1.95nF
Current - Continuous Drain(Id)179A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
TypeN-Channel

Technical details

N-Channel 150V 179A 3.8W HSOF-8

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