Infineon · FETs & Power MOSFETs · MPN IPT030N12N3G
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| Gate Charge(Qg) | 198nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 1.7nF |
| Current - Continuous Drain(Id) | 237A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13nF |
| Type | N-Channel |
120V 237A 4V 375W 3mΩ@10V 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS