Infineon · FETs & Power MOSFETs · MPN IPT029N08N5
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 169A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 2.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
N-Channel 80V 169A 167W HSOF-8