Infineon · FETs & Power MOSFETs · MPN IPT026N10N5ATMA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 96nC@10V |
| Output Capacitance(Coss) | 1.3nF |
| Current - Continuous Drain(Id) | 202A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.8nF |
| Type | N-Channel |
100V 202A 3.8V 214W 2.6mΩ@10V 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS