Infineon · FETs & Power MOSFETs · MPN IPT023N10NM5LF2ATMA1
5.0/5 from 1 engineer review.
| Output Capacitance(Coss) | 1.3nF |
|---|---|
| Pd - Power Dissipation | 300W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 115nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| RDS(on) | 1.6mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.1nF |
300W 100V 3.1V 1.6mΩ@15V 1 N-channel N-Channel PG-HSOF-8 Single FETs, MOSFETs RoHS