Infineon · FETs & Power MOSFETs · MPN IPT020N10N3ATMA1
No reviews yet — be the first to review Infineon IPT020N10N3ATMA1.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 207nC@10V |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.896nF |
N-Channel 100V 300A 375W HSOF-8