Infineon · FETs & Power MOSFETs · MPN IPT019N08N5ATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 101nC |
| Current - Continuous Drain(Id) | 247A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 231W |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.2nF |
80V 247A 3.8V 231W 1.9mΩ@10V 1 N-channel HSOF-8 Single FETs, MOSFETs RoHS