Infineon IPT017N12NM6ATMA1

Infineon · FETs & Power MOSFETs · MPN IPT017N12NM6ATMA1

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)141nC@10V
Output Capacitance(Coss)3.1nF
Current - Continuous Drain(Id)331A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11nF
TypeN-Channel

Technical details

N-Channel 120V 331A 3W HSOF-8

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