Infineon · FETs & Power MOSFETs · MPN IPT017N10NF2S
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| Gate Charge(Qg) | 195nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.4nF |
| Current - Continuous Drain(Id) | 294A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.3nF |
| Type | N-Channel |
N-Channel 100V 294A HSOF-8