Infineon IPT015N10N5

Infineon · FETs & Power MOSFETs · MPN IPT015N10N5

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Specifications

Gate Charge(Qg)211nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2.3nF
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)2mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)16nF
TypeN-Channel

Technical details

N-Channel 100V 300A 375W HSOF-8

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