Infineon IPT014N08NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPT014N08NM5ATMA1

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Specifications

Gate Charge(Qg)200nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)2.3nF
Current - Continuous Drain(Id)331A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14nF
TypeN-Channel

Technical details

N-Channel 80V 331A 300W HSOF-8

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