Infineon IPT013N08NM5LFATMA1

Infineon · FETs & Power MOSFETs · MPN IPT013N08NM5LFATMA1

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Specifications

Gate Charge(Qg)158nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)2.6nF
Current - Continuous Drain(Id)333A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.1V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)820pF
TypeN-Channel

Technical details

N-Channel 80V 333A 278W HSOF-8

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