Infineon · FETs & Power MOSFETs · MPN IPT012N08NF2SATMA1
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| Gate Charge(Qg) | 255nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 351A |
| Output Capacitance(Coss) | 1.9nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 1.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
80V 351A 3.8V 300W 1.1mΩ@10V 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS