Infineon IPT012N08N5

Infineon · FETs & Power MOSFETs · MPN IPT012N08N5

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Specifications

Gate Charge(Qg)178nC
Drain to Source Voltage80V
Output Capacitance(Coss)2nF
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)86pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
Vgs±20V

Technical details

N-Channel 80V 375W HSOF-8

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