Infineon · FETs & Power MOSFETs · MPN IPT012N06NATMA1
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| Gate Charge(Qg) | 106nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.8nF |
| Current - Continuous Drain(Id) | 313A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF |
| RDS(on) | 1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.8nF |
| Type | N-Channel |
N-Channel 60V 313A 214W Surface Mount HSOF-8