Infineon IPT008N06NM5LFATMA1

Infineon · FETs & Power MOSFETs · MPN IPT008N06NM5LFATMA1

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Specifications

Gate Charge(Qg)185nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)3.8nF
Current - Continuous Drain(Id)454A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)0.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)980pF
TypeN-Channel

Technical details

N-Channel 60V 454A 278W HSOF-8

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