Infineon IPT007N06N

Infineon · FETs & Power MOSFETs · MPN IPT007N06N

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Specifications

Gate Charge(Qg)216nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)4.522nF
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)458pF
RDS(on)0.75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)21.28nF
TypeN-Channel

Technical details

N-Channel 60V 300A 375W HSOF-8

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