Infineon IPSA70R750P7SAKMA1

Infineon · FETs & Power MOSFETs · MPN IPSA70R750P7SAKMA1

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Specifications

Drain to Source Voltage700V
Gate Charge(Qg)8.3nC@10V
Output Capacitance(Coss)5.1pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)306pF

Technical details

N-Channel 700V 6.5A 34.7W Through Hole TO-251-3

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