Infineon · FETs & Power MOSFETs · MPN IPSA70R2K0P7SAKMA1
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| Gate Charge(Qg) | 3.8nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 17.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 79pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 130pF |
700V 2A 3V 17.6W 2Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS