Infineon IPSA70R1K2P7SAKMA1

Infineon · FETs & Power MOSFETs · MPN IPSA70R1K2P7SAKMA1

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Specifications

Drain to Source Voltage700V
Gate Charge(Qg)4.8nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)132pF
RDS(on)1.2Ω
Number1 N-channel
Input Capacitance(Ciss)174pF

Technical details

N-Channel 700V 3A 25W Through Hole TO-251-3

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